strong ir fet? IRFB7545pbf 1 www.irf.com ? 2014 international rectifier submit datasheet feedback november 5, 2014 hexfet ? power mosfet d s g application ?? brushed motor drive applications ?? bldc motor drive applications ?? battery powered circuits ?? half-bridge and full-bridge topologies ?? synchronous rectifier applications ?? resonant mode power supplies ?? or-ing and redundant power switches ?? dc/dc and ac/dc converters ?? dc/ac inverters benefits ?? improved gate, avalanche and dynamic dv/dt ruggedness ?? fully characterized capacitance and avalanche soa ?? enhanced body diode dv/dt and di/dt capability ?? lead-free, rohs compliant v dss 60v r ds(on) typ. 4.9m ? ? max 5.9m ? ? i d 95a ? fig 2. maximum drain current vs. case temperature to-220ab s d g g d s gate drain source base part number package type standard pack orderable part number form quantity IRFB7545pbf to-220 tube 50 IRFB7545pbf 4 6 8 10 12 14 16 18 20 v gs, gate -to -source voltage (v) 2 4 6 8 10 12 14 r d s ( o n ) , d r a i n - t o - s o u r c e o n r e s i s t a n c e ( m ? ) i d = 57a t j = 25c t j = 125c fig 1. typical on-resistance vs. gate voltage 25 50 75 100 125 150 175 t c , case temperature (c) 0 20 40 60 80 100 i d , d r a i n c u r r e n t ( a ) downloaded from: http:///
? IRFB7545pbf 2 www.irf.com ? 2014 international rectifier submit datasheet feedback november 5, 2014 absolute maximum rating symbol parameter max. units i d @ t c = 25c continuous drain current, v gs @ 10v 95 i d @ t c = 100c continuous drain current, v gs @ 10v 67 a i dm pulsed drain current ?? 380 ? p d @t c = 25c maximum power dissipation 125 w linear derating factor 0.83 w/c v gs gate-to-source voltage 20 v t j t stg operating junction and storage temperature range -55 to + 175 ? c ? soldering temperature, for 10 seconds (1.6mm from case) 300 mounting torque, 6-32 or m3 screw 10 lbfin (1.1 nm) ? avalanche characteristics ? symbol parameter max. units e as (thermally limited) single pulse avalanche energy ?? 140 mj e as (thermally limited) single pulse avalanche energy ?? 235 ? i ar avalanche current ? see fig 15, 16, 23a, 23b a e ar repetitive avalanche energy ? mj thermal resistance ? symbol parameter typ. max. units r ? jc junction-to-case ?? CCC 1.21 c/w ? r ? cs case-to-sink, flat greased surface 0.50 CCC r ? ja junction-to-ambient ? CCC 62 static @ t j = 25c (unless otherwise specified) symbol parameter min. typ. max. units conditions v (br)dss drain-to-source breakdown voltage 60 CCC CCC v v gs = 0v, i d = 250a ? v (br)dss / ? t j breakdown voltage temp. coefficient CCC 46 CCC mv/c reference to 25c, i d = 1ma r ds(on) static drain-to-source on-resistance CCC 4.9 5.9 m ?? v gs = 10v, i d = 57a ? v gs(th) gate threshold voltage 2.1 CCC 3.7 v v ds = v gs , i d = 100a i dss drain-to-source leakage current CCC CCC 1.0 a v ds = 60v, v gs = 0v CCC CCC 150 v ds = 60v,v gs = 0v,t j =125c i gss gate-to-source forward leakage CCC CCC 100 na v gs = 20v gate-to-source reverse leakage CCC CCC -100 v gs = -20v r g gate resistance CCC 2.3 CCC ?? CCC 6.3 CCC ? v gs = 6.0v, i d = 29a ? notes: ?? repetitive rating; pulse width limited by max. junction temperature. ? limited by t jmax , starting t j = 25c, l = 88h, r g = 50 ? , i as = 57a, v gs =10v. ?? i sd ? 57a, di/dt ? 810a/s, v dd ? v (br)dss , t j ?? 175c. ?? pulse width ? 400s; duty cycle ? 2%. ? c oss eff. (tr) is a fixed capacitance that gives the same charging time as c oss while v ds is rising from 0 to 80% v dss . ? c oss eff. (er) is a fixed capacitance that gives the same energy as c oss while v ds is rising from 0 to 80% v dss . ? r ? is measured at t j approximately 90c. ? limited by t jmax , starting t j = 25c, l = 1mh, r g = 50 ? , i as = 22a, v gs =10v. downloaded from: http:///
? IRFB7545pbf 3 www.irf.com ? 2014 international rectifier submit datasheet feedback november 5, 2014 dynamic electrical characteristics @ t j = 25c (unless otherwise specified) symbol parameter min. typ. max. units conditions gfs forward transconductance 90 CCC CCC s v ds = 25v, i d = 57a q g total gate charge CCC 75 110 i d = 57a q gs gate-to-source charge CCC 19 CCC v ds = 30v q gd gate-to-drain charge CCC 24 CCC v gs = 10v q sync total gate charge sync. (qg C qgd) CCC 32 CCC t d(on) turn-on delay time CCC 12 CCC ns v dd = 30v t r rise time CCC 72 CCC i d = 57a t d(off) turn-off delay time CCC 44 CCC r g = 2.7 ?? t f fall time CCC 43 CCC v gs = 10v ? c iss input capacitance CCC 4010 CCC pf ? v gs = 0v c oss output capacitance CCC 370 CCC v ds = 25v c rss reverse transfer capacitance CCC 230 CCC ? = 1.0mhz, see fig.7 c oss eff.(er) effective output capacitance (energy related) CCC 370 CCC v gs = 0v, vds = 0v to 48v ? c oss eff.(tr) output capacitance (time related) CCC 470 CCC v gs = 0v, vds = 0v to 48v ? diode characteristics ? symbol parameter min. typ. max. units conditions i s continuous source current CCC CCC 95 a mosfet symbol (body diode) showing the i sm pulsed source current CCC CCC 380 integral reverse (body diode) ?? p-n junction diode. v sd diode forward voltage CCC CCC 1.2 v t j = 25c,i s = 57a,v gs = 0v ?? dv/dt peak diode recovery dv/dt ? CCC 12 CCC v/ns t j = 175c,i s = 57a,v ds = 60v ? t rr reverse recovery time CCC 33 CCC ns t j = 25c v dd = 51v CCC 37 CCC t j = 125c i f = 57a, q rr reverse recovery charge CCC 36 CCC nc t j = 25c di/dt = 100a/s ??? CCC 48 CCC t j = 125c ? i rrm reverse recovery current CCC 2.0 CCC a t j = 25c ? nc ? d s g downloaded from: http:///
? IRFB7545pbf 4 www.irf.com ? 2014 international rectifier submit datasheet feedback november 5, 2014 fig 5. typical transfer characteristics 0.1 1 10 100 1000 v ds , drain-to-source voltage (v) 1 10 100 1000 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) 4.5v ? 60s pulse width tj = 175c vgs top 15v 10v 8.0v 7.0v 6.0v 5.5v 5.0v bottom 4.5v -60 -40 -20 0 20 40 60 80 100 120 140 160 180 t j , junction temperature (c) 0.4 0.8 1.2 1.6 2.0 2.4 r d s ( o n ) , d r a i n - t o - s o u r c e o n r e s i s t a n c e ( n o r m a l i z e d ) i d = 57a v gs = 10v fig 6. normalized on-resistance vs. temperature fig 4. typical output characteristics 0.1 1 10 100 1000 v ds , drain-to-source voltage (v) 0.1 1 10 100 1000 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) vgs top 15v 10v 8.0v 7.0v 6.0v 5.5v 5.0v bottom 4.5v ? 60s pulse width tj = 25c 4.5v 2.0 3.0 4.0 5.0 6.0 7.0 8.0 v gs , gate-to-source voltage (v) 0.1 1 10 100 1000 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) t j = 25c t j = 175c v ds = 25v ? 60s pulse width fig 3. typical output characteristics fig 7. typical capacitance vs. drain-to-source voltage 0 102030405060708090100 q g , total gate charge (nc) 0.0 2.0 4.0 6.0 8.0 10.0 12.0 14.0 v g s , g a t e - t o - s o u r c e v o l t a g e ( v ) v ds = 48v v ds = 30v v ds = 12v i d = 57a fig 8. typical gate charge vs. gate-to-source voltage 1 10 100 v ds , drain-to-source voltage (v) 100 1000 10000 100000 c , c a p a c i t a n c e ( p f ) v gs = 0v, f = 1 mhz c iss = c gs + c gd , c ds shorted c rss = c gd c oss = c ds + c gd c oss c rss c iss downloaded from: http:///
? IRFB7545pbf 5 www.irf.com ? 2014 international rectifier submit datasheet feedback november 5, 2014 -10 0 10 20 30 40 50 60 v ds, drain-to-source voltage (v) 0.0 0.1 0.2 0.3 0.4 0.5 0.6 e n e r g y ( j ) 0.1 1 10 v ds , drain-to-source voltage (v) 0.1 1 10 100 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) tc = 25c tj = 175c single pulse 10msec 1msec operation in this area limited by r ds (on) 100sec dc fig 10. maximum safe operating area fig 11. drain-to-source breakdown voltage 0 40 80 120 160 200 i d , drain current (a) 4 6 8 10 12 14 16 r d s ( o n ) , d r a i n - t o - s o u r c e o n r e s i s t a n c e ( m ? ) vgs = 5.5v vgs = 6.0v vgs = 7.0v vgs = 8.0v vgs = 10v fig 13. typical on-resista nce vs. drain current 0.2 0.6 1.0 1.4 1.8 v sd , source-to-drain voltage (v) 1.0 10 100 1000 i s d , r e v e r s e d r a i n c u r r e n t ( a ) t j = 25c t j = 175c v gs = 0v -60 -40 -20 0 20 40 60 80 100 120 140 160 180 t j , temperature ( c ) 66 68 70 72 74 76 78 80 v ( b r ) d s s , d r a i n - t o - s o u r c e b r e a k d o w n v o l t a g e ( v ) id = 1.0ma fig 9. typical source-drain diode forward voltage fig 12. typical c oss stored energy downloaded from: http:///
? IRFB7545pbf 6 www.irf.com ? 2014 international rectifier submit datasheet feedback november 5, 2014 1e-006 1e-005 0.0001 0.001 0.01 0.1 1 t 1 , rectangular pulse duration (sec) 0.001 0.01 0.1 1 10 t h e r ma l r e s p o n s e ( z t h j c ) c / w 0.20 0.10 d = 0.50 0.02 0.01 0.05 single pulse ( thermal response ) notes: 1. duty factor d = t1/t2 2. peak tj = p dm x zthjc + tc fig 14. maximum effective transient thermal impedance, junction-to-case fig 16. maximum avalanche energy vs. temperature 25 50 75 100 125 150 175 starting t j , junction temperature (c) 0 25 50 75 100 125 150 e a r , a v a l a n c h e e n e r g y ( m j ) top single pulse bottom 1.0% duty cycle i d = 57a fig 15. avalanche current vs. pulse width notes on repetitive avalanche curves , figures 15, 16: (for further info, see an-1005 at www.irf.com) 1.avalanche failures assumption: purely a thermal phenomenon and failure occurs at a temperature far in excess of t jmax . this is validated for every part type. 2. safe operation in avalanche is allowed as long ast jmax is not exceeded. 3. equation below based on circuit and waveforms shown in figures 23a, 23b. 4. p d (ave) = average power dissipation per single avalanche pulse. 5. bv = rated breakdown voltage (1.3 factor accounts for voltage increase during avalanche). 6. i av = allowable avalanche current. 7. ? t = allowable rise in junction temperature, not to exceed t jmax (assumed as 25c in figure 15, 16). t av = average time in avalanche. d = duty cycle in avalanche = tav f z thjc (d, t av ) = transient thermal resistance, see figures 13) pd (ave) = 1/2 ( 1.3bvi av ) = ? t/ z thjc i av = 2 ? t/ [1.3bvz th ] e as (ar) = p d (ave) t av ?? 1.0e-06 1.0e-05 1.0e-04 1.0e-03 1.0e-02 tav (sec) 0.1 1 10 100 1000 a v a l a n c h e c u r r e n t ( a ) allowed avalanche cu rrent vs avalanche pulsewidth, tav, assuming ?? j = 25c and tstart = 150c. allowed avalanche cu rrent vs avalanche pulsewidth, tav, assuming ? tj = 150c and tstart =25c (single pulse) downloaded from: http:///
? IRFB7545pbf 7 www.irf.com ? 2014 international rectifier submit datasheet feedback november 5, 2014 -75 -50 -25 0 25 50 75 100 125 150 175 t j , temperature ( c ) 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 v g s ( t h ) , g a t e t h r e s h o l d v o l t a g e ( v ) i d = 100a i d = 250a i d = 1.0ma i d = 1.0a 0 200 400 600 800 1000 di f /dt (a/s) 0 2 4 6 8 10 12 i r r m ( a ) i f = 57a v r = 51v t j = 25c t j = 125c fig 17. threshold voltage vs. temperature fig 21. typical stored charge vs. dif/dt 0 200 400 600 800 1000 di f /dt (a/s) 0 2 4 6 8 10 12 i r r m ( a ) i f = 38a v r = 51v t j = 25c t j = 125c 0 200 400 600 800 1000 di f /dt (a/s) 0 50 100 150 200 q r r ( n c ) i f = 38a v r = 51v t j = 25c t j = 125c fig 18. typical recovery current vs. dif/dt fig 20. typical stored charge vs. dif/dt fig 19. typical recovery current vs. dif/dt 0 200 400 600 800 1000 di f /dt (a/s) 0 50 100 150 200 q r r ( n c ) i f = 57a v r = 51v t j = 25c t j = 125c downloaded from: http:///
? IRFB7545pbf 8 www.irf.com ? 2014 international rectifier submit datasheet feedback november 5, 2014 fig 22. peak diode recovery dv/dt test circuit for n-channel hexfet ? power mosfets fig 23a. unclamped inductive test circuit r g i as 0.01 ? t p d.u.t l v ds + - v dd driver a 15v 20v fig 24a. switching time test circuit fig 25a. gate charge test circuit t p v (br)dss i as fig 23b. unclamped inductive waveforms fig 24b. switching time waveforms vds vgs id vgs(th) qgs1 qgs2 qgd qgodr fig 25b. gate charge waveform vdd ? downloaded from: http:///
? IRFB7545pbf 9 www.irf.com ? 2014 international rectifier submit datasheet feedback november 5, 2014 to-220ab package outline (dimensions are shown in millimeters (inches)) to-220ab part marking information note: for the most current drawing please refer to ir website at http://www.irf.com/package/ in t e r n a t io n a l part number r e c t if ie r lo t c o d e assem bly lo g o year 0 = 2000 date code w eek 19 lin e c lot code 1789 e x a m p l e : t h is is a n ir f 1 0 1 0 n o te : "p " in a s s e m b ly lin e p o s itio n indicates "lead - free" in th e assem bly lin e "c " assem bled o n w w 19, 2000 to-220ab packages are not recommended for surface mount application . downloaded from: http:///
? IRFB7545pbf 10 www.irf.com ? 2014 international rectifier submit datasheet feedback november 5, 2014 ? qualification standards can be found at international rectifiers web site: http://www.irf.com/product-info/reliability/ ?? applicable version of jedec standar d at the time of product release. qualification information ? ? qualification level ? industrial (per jedec jesd47f) ?? moisture sensitivity level to-220 n/a rohs compliant yes ir world headquarters: 101 n. sepulveda blvd., el segundo, california 90245, usa to contact international rectifier, please visit http://www.irf.com/whoto-call/ revision history date comment 11/5/2014 ?? updated e as (l =1mh) = 235mj on page 2 ?? updated note 8 limited by t jmax , starting t j = 25c, l = 1mh, r g = 50 ? , i as = 22a, v gs =10v. on page 2 ?? updated package outline on page 9 downloaded from: http:///
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